Lecturer: Mariya Rasshchupkyna (Ukraine) Date: 2010-04-15 10:30 Place: Aniara
Monte Carlo method for crystal growth simulation
Mariya Rasshchupkyna
Dnepropetrovsk National University, Ukraine
Abstract
The report consists of two parts.
The first part refers to the Monte Carlo modeling in general, grounds its
necessity on the example of Ising ferromagnetic model (in static variant of the
Monte Carlo method) and describes the main principle of the method - the
principle of the configurations? chose according to their importance.
The second part refers to the kinetic Monte Carlo simulation. Development
of models used for modeling in condensed matter physics on the examples from
literature (for the basic model) and from the PhD thesis is shown.
In the report the following sections (those from the thesis) are present:
- MC simulation of the liquid phase epitaxy.
- MC simulation of crystal growth from binary and triple alloys.
- MC simulation of the process of drops and thin films formation.
- MC simulation of directional solidification.
Created 2010-04-09 08:45:20 by Mats Holmström Last changed 2010-04-12 10:03:17 by Mats Holmström
